12.11. IRF7314- IRF7316
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching
speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the
designer with an extremely efficient and reliable device for use in a wide variety of applications.
The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and
multiple-die capability making it ideal in a variety of power applications. With these improvements,
multiple devices can be used in an application with dramatically reduced board space. The package is
designed for vapor phase, infra red, or wave soldering techniques.
IRF7314 IRF7316
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) (IRF7314)
Symbol Maximum Units
Drain-Source Voltage VDS -20
V
Gate-Source Voltage VGS ? 12
TA= 25°C -5.3
Continuous Drain Current I
TA= 70°C -4.3
A
Pulsed Drain Current IDM -21
Continuous Source Current (Diode Conduction) IS -2.5
TA= 25°C 2.0
Maximum Power Dissipation P W
1.3
Single Pulse Avalanche Energy EAS 150 mJ
Avalanche Current IAR -2.9 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt dv/dt -5.0 V/ ns
Junction and Storage Temperature Range TJ, TSTG -55 to + 150 °C
Absolute Maximum Ratings ( TA = 25°C Unless Otherwise Noted) (IRF7316)
Symbol Maximum Units
Drain-Source Voltage VDS -30
V
Gate-Source Voltage VGS ? 20
TA= 25°C -4.9
Continuous Drain Current I
TA= 70°C -3.9
A
Pulsed Drain Current IDM -30
Continuous Source Current (Diode Conduction) IS -2.5
TA= 25°C 2.0
Maximum Power Dissipation P W
TA= 70°C 1.3
Single Pulse Avalanche Energy EAS 140 mJ
Avalanche Current IAR -2.8 A
Repetitive Avalanche Energy EAR 0.20 mJ
Peak Diode Recovery dv/dt dv/dt -5.0 V/ ns
14
27? TFT TV Service Manual 05/09/2005 |
ACEC
TOSHIBA
