12.14.TCET1102G (IC801)
12.14.1.Description
The TCET110/ TCET2100/ TCET4100 consists of a phototransistor optically coupled to a gallium
arsenide infrared -emitting diode in a 4 -lead up to 16 -lead plastic dual inli ne package. The elements are
mounted on one lead frame using a coplanar techniqu e, providing a fixed distance between input and
output for highest safety requirements.
12.14.2.Applications
Circuits for safe protective separation against electrical shock according to safety class II (reinforced
isolation):
For appl. class I - IV at mains voltage =300 V
For appl. class I - III at mains voltage =600 V
According to VDE 0884, table 2, suitable for: Switch -mode power supplies, line receiver, computer
peripheral interface, microprocessor system interface.
12.14.3.Features
VDE 0884 related features:
Rated impulse voltage (transient overvoltage) V IOTM = 8 kV peak
Isolation test voltage (partial discharge test voltage) V pd = 1.6 kV
Rated isolation voltage (RMS in cludes DC) V IOWM = 600 V RMS (848 V peak)
Rated recurring peak voltage (repetitive) V IORM = 600 V RMS
General features:
CTR offered in 9 groups
Isolation materials according to UL94 -VO
Pollution degree 2 (DIN/VDE 0110 / resp. IEC 664)
Climatic classific ation 55/100/21 (IEC 68 part 1)
Special construction: Therefore, extra low coupling capacity of typical 0.2pF, high Common Mode
Rejection
Low temperature coefficient of CTR
G = Leadform 10.16 mm; provides creepage distance > 8 mm, for TCET2100/ TCET4100 optional;
suffix letter ?G? is not marked on the optocoupler
Coupling System U
29
AK53 D.O.C. Service Manual 22/03/2004 |
ACEC
